Gel formation theory approach for the modelling of negative chemically amplified e-beam resists

被引：5

作者：

Patsis, G

Raptis, I

Glezos, N

Argitis, P

Hatzakis, M

Aidinis, CJ

Gentili, M

Maggiora, R

机构：

[1] Institute of Microelectronics, NCSR DEMOKRITOS, 15310, Aghia Paraskevi, Attiki

[2] Department of Physics, University of Athens, 15771, Athens

[3] IESS-CNR, Via Cineto Romano 42, I-00156, Rome

来源：

MICROELECTRONIC ENGINEERING | 1997年 / 35卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(96)00178-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gel formation theory is applied for the interpretation of experimental lithographic results of epoxy based negative e-beam resists. The success of different theoretical models in fitting experiments depends upon the value of concentration of the photoacid generator (PAG) and the thermal processing conditions. The chemical composition of each specific system, the sensitivity and the range of acid diffusion are important parameters in the analysis. It is concluded that existing theories with an appropriate interpretation explain satisfactorily experimental results in a given range of resist composition and processing parameters. However in some cases a model which would include more explicitly the reaction-diffusion mechanism is required.

引用

页码：157 / 160

页数：4

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