The 3-D structure of polycrystalline diamond film by electron backscattering diffraction (EBSD)

被引:18
作者
Chen, HW [1 ]
Rudolph, V [1 ]
机构
[1] Univ Queensland, Dept Chem Engn, Brisbane, Qld 4072, Australia
关键词
diamond films; crystal orientation; EBSD; CHEMICAL-VAPOR-DEPOSITION; NUCLEATION; GROWTH; SILICON; CVD; FIELD;
D O I
10.1016/S0925-9635(03)00187-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A lithographic method was used to produce polycrystalline diamond films having highly defined surface geometry, showing an array of diamond tips for possible application as a field emitter device. The films grown in this study used microwave plasma assisted chemical vapour deposition (MACVD) on a silicon substrate; the substrate was then dissolved away to reveal the surface features on the diamond film. It is possible to align the crystallite direction and affect the electron emission properties using a voltage bias to enhance the nucleation process and influence the nuclei to a preferred orientation. This study focuses on the identification of the distribution of crystal directions in the film, using electron backscattering diffraction (EBSD) to identify the crystallographic character of the film surface. EBSD allows direct examination of the individual diamond grains, grains boundaries and the crystal orientation of each individual crystallite. The EBSD maps of the bottom (nucleation side) of the films, following which a layer of film is ion-milled away and the mapping process repeated. The method demonstrates experimentally that oriented nucleation occurs and the thin sections allow the crystal texture to be reconstructed in 3-D. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:1633 / 1639
页数:7
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