EXPERIMENTAL CHARACTERIZATION OF BIAS-ENHANCED NUCLEATION OF DIAMOND ON SI

被引：49

作者：

GERBER, J ^{[1
]}

SATTEL, S ^{[1
]}

JUNG, K ^{[1
]}

EHRHARDT, H ^{[1
]}

ROBERTSON, J ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,DEPT ENGN,CAMBRIDGE CB2 1PZ,ENGLAND

来源：

关键词：

DIAMOND NUCLEATION; DC BIAS MEASUREMENT; ION BOMBARDMENT; CHARACTERIZATION;

D O I：

10.1016/0925-9635(94)05215-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports an extensive characterisation of the bias process used to increase the nucleation density of diamond on Si. The nucleation density has been measured as a function of bias voltage, methane gas flow ratio, and temperature. The nucleation density is found to be increased above 650 degrees C and reach a maximum at around -250 V. The nucleation density increases rapidly with time, up to a saturation value of about 10(10) cm(-2). The ion energy distribution is measured by a retarding field probe and has a maximum at approximate to 70-90 eV. This is close to the optimum energy for ion subplantation, responsible for sp(3) bonding in diamond-like carbon, which suggests that bias aids nucleation by some form of subplantation process.

引用

页码：559 / 562

页数：4

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