A point defect complex related to the yellow luminescence in electron irradiated GaN

被引：21

作者：

Kuriyama, K ^{[1
]}

Kondo, H

Okada, M

机构：

[1] Hosei Univ, Coll Engn, Tokyo 1848584, Japan

[2] Hosei Univ, Res Ctr Ion Beam Technol, Tokyo 1848584, Japan

[3] Kyoto Univ, Inst Res Reactor, Osaka 54004, Japan

来源：

SOLID STATE COMMUNICATIONS | 2001年 / 119卷 / 10-11期

关键词：

semiconductors; point defects; radiation effects; luminescence;

D O I：

10.1016/S0038-1098(01)00304-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Point defect complexes related to the yellow luminescence (YL; similar to2.2 eV) produced in un-doped GaN by 30 MeV electron irradiation are studied using a photoluminescence method. The YL intensity in 700 degreesC annealed samples is about five times larger than that in un-irradiated materials, indicating that deep level defects are created by electron irradiation and subsequent annealing. The YL is associated with point defect complexes arising from the combination of the irradiation introduced Ga. vacancies and the residual donor impurities driven by high temperature annealing. The YL is not annealed out by annealing at 1000 degreesC, showing the thermal stability of artificially introduced defects. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：559 / 562

页数：4

共 13 条

[1] Photoluminescence of GaN: Effect of electron irradiation [J].