Absence of substrate roughness effects on an all-printed organic transistor operating at one volt

被引：21

作者：

Kaihovirta, Nikolai J. ^{[1
,2
,3
]}

Tobjork, Daniel ^{[1
,2
,3
]}

Makela, Tapio ^{[1
,2
]}

Osterbacka, Ronald ^{[1
,2
]}

机构：

[1] Abo Akad Univ, Ctr Funct Mat, FI-20500 Turku, Finland

[2] Abo Akad Univ, Dept Phys, FI-20500 Turku, Finland

[3] Turku Univ, Grad Sch Mat Res, FI-20500 Turku, Finland

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 05期

基金：

芬兰科学院;

关键词：

D O I：

10.1063/1.2958225

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A hygroscopic insulator transistor (HIFET) operating at 1 V was manufactured using roll-to-roll techniques on a rough, low-cost plastic substrate. The effects of the substrate roughness on the active channel were studied by using two different plastic substrates and comparing HIFETs and organic field-effect transistors (OFETs). We found that the HIFET, as opposed to OFETs, is rather insensitive to changes in the roughness of plastic substrates. Hence, a robust feature of ion modulated transistors is shown. (C) 2008 American Institute of Physics.

引用

页数：3

共 12 条

[1] Operating principle of polymer insulator organic thin-film transistors exposed to moisture -: art. no. 074504 [J].

Bäcklund, TG ;

Osterbacka, R ;

Stubb, H ;

Bobacka, J ;

Ivaska, A .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (07)

[2] Observation of field-effect transistor behavior at self-organized interfaces [J].

Chua, LL ;

Ho, PKH ;

Sirringhaus, H ;

Friend, RH .

ADVANCED MATERIALS, 2004, 16 (18) :1609-+

[3] Pentacene field-effect transistors with a laminated Mylar™ foil as gate dielectric [J].

Diallo, Karim ;

Erouel, Mohsen ;

Tardy, Jacques .

APPLIED PHYSICS LETTERS, 2006, 89 (23)

[4] Low-voltage polymer field-effect transistors gated via a proton conductor [J].

Herlogsson, Lars ;

Crispin, Xavier ;

Robinson, Nathaniel D. ;

Sandberg, Mats ;

Hagel, Olle-Jonny ;

Gustafsson, Goran ;

Berggren, Magnus .

ADVANCED MATERIALS, 2007, 19 (01) :97-+

[5] The effect of interfacial roughness on the thin film morphology and charge transport of high-performance polythiophenes [J].

Jung, Youngsuk ;

Kline, R. Joseph ;

Fischer, Daniel A. ;

Lin, Eric K. ;

Heeney, Martin ;

McCulloch, Iain ;

DeLongchamp, Dean M. .

ADVANCED FUNCTIONAL MATERIALS, 2008, 18 (05) :742-750

[6] Low-voltage organic transistors fabricated using reverse gravure coating on prepatterned substrates [J].

Kaihovirta, Nikolai J. ;

Tobjork, Daniel ;

Makela, Tapio ;

Osterbacka, Ronald .

ADVANCED ENGINEERING MATERIALS, 2008, 10 (07) :640-643

[7] Pentacene thin film transistors on inorganic dielectrics:: Morphology, structural properties, and electronic transport [J].

Knipp, D ;

Street, RA ;

Völkel, A ;

Ho, J .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) :347-355

[8] A polymer gate dielectric for high-mobility polymer thin-film transistors and solvent effects [J].

Park, J ;

Park, SY ;

Shim, SO ;

Kang, H ;

Lee, HH .

APPLIED PHYSICS LETTERS, 2004, 85 (15) :3283-3285

[9] High-performance all-polymer transistor utilizing a hygroscopic insulator [J].

Sandberg, HGO ;

Bäcklund, TG ;

Österbacka, R ;

Stubb, H .

ADVANCED MATERIALS, 2004, 16 (13) :1112-+

[10] Device physics of Solution-processed organic field-effect transistors [J].

Sirringhaus, H .

ADVANCED MATERIALS, 2005, 17 (20) :2411-2425

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