Dimensionality of excitons in laser-diode structures composed of InxGa1-xN multiple quantum wells

被引：195

作者：

Narukawa, Y ^{[1
]}

Kawakami, Y

Fujita, S

Nakamura, S

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan

[2] Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 7748601, Japan

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.59.10283

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Temperature dependence of radiative and nonradiative lifetimes of localized excitons has been assessed in the laser diode structures composed of In0.20Ga0.80N (6 nm)/In0.05Ga0.95N (6 nm) multiple quantum well (MQW) [sample (a)] and In0.10Ga0.90N (3 mm)/In0.02Ga0.98N (6 nm) MQW [sample (b)] by means of time-resolved photoluminescence spectroscopy. The radiative lifetimes (tau(rad)) in sample (a) were almost constant around 6 ns between 23 K and 200 K, suggesting the mesoscopic effect where excitons are confined in the zero-dimensional potential such as a quantum-dot-like region. This interpretation fairly agrees with the result that the emission was ascribed to the localized excitons whose depth is about 250 meV. The tau(rad) value in sample (b) was 460 ps at 20 K and grew with increasing temperature. It was found that the depth of exciton localization in sample (b) is so weak that excitons reveal a nearly two-dimensional feature at RT as a result of the delocalization effect. [S0163-1829(99)08815-3].

引用

页码：10283 / 10288

页数：6

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