Electroluminescent SiO2/Si superlattices prepared by low pressure chemical vapour deposition

被引：23

作者：

Heikkila, L ^{[1
]}

Kuusela, T ^{[1
]}

Hedman, HP ^{[1
]}

Ihantola, H ^{[1
]}

机构：

[1] Univ Turku, Dept Appl Phys, Lab Elect & Informat Technol, FIN-20014 Turku, Finland

来源：

APPLIED SURFACE SCIENCE | 1998年 / 133卷 / 1-2期

关键词：

superlattice; electroluminescence; chemical vapour deposition; silicon;

D O I：

10.1016/S0169-4332(98)00186-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

SiO2/Si superlattices were fabricated by low pressure chemical vapour deposition. Superlattices of 1-6 nm in layer thickness and having 1-60 layer pairs were investigated in order to evaluate their surface structure and electroluminescent properties. The atomic force microscope (AFM) studies are presented for investigation of surface morphology, and the transmission electron microscope (TEM) analysis for revealing layer structure. The current-voltage characteristics and the electroluminescence spectrum are also shown. The experimental results show that the superlattices prepared by chemical vapour deposition can emit visible light when the forward bias voltage exceeded 6 V. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：84 / 88

页数：5

共 10 条

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