AFM and STM investigations of electroluminescent SiO2/Si superlattices prepared by chemical vapour deposition

被引：6

作者：

Heikkila, L ^{[1
]}

Kuusela, T ^{[1
]}

Hedman, HP ^{[1
]}

Pavlov, A ^{[1
]}

Ihantola, H ^{[1
]}

机构：

[1] Univ Turku, Dept Appl Phys, Lab Elect & Informat Technol, FIN-20014 Turku, Finland

来源：

SOLID STATE PHENOMENA | 1997年 / 54卷

关键词：

electroluminescence; SiO2/Si superlattice; AFM; STM; CVD;

D O I：

10.4028/www.scientific.net/SSP.54.13

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Chemical vapour deposition in low pressures has been used to prepare SiO2/Si superlattices of 1-3 nm in thickness in order to manufacture electroluminescent components. The AFM and STM studies are presented for investigation of surface morphology and electrical properties of superlattice. The current-voltage characteristic and the electro-luminescence spectrum are also shown.

引用

页码：13 / 20

页数：8

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