CORRELATION BETWEEN PHOTOLUMINESCENCE AND DENSITY OF ELECTRONIC STATES IN LASER-DEPOSITED POROUS SILICON

被引：10

作者：

LAIHO, R

PAVLOV, A

机构：

[1] Wihuri Physical Laboratory, University of Turku

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.51.14774

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence (PL) spectra of porous silicon layers deposited with an Ar-ion laser, using different carrier gas atmospheres (vacuum, O2, H2, N2+vaporized ethanol), are investigated at room temperature. The specimens prepared under vacuum or in an O2 atmosphere have the main PL in the yellow and those deposited in H2 have the main PL in the red region. A correlation is obtained between the PL spectra and the density of electronic states determined for the same samples with a scanning tunneling microscope. © 1995 The American Physical Society.

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页码：14774 / 14777

页数：4

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