ELECTRON-PARAMAGNETIC-RESONANCE IN HEAT-TREATED POROUS SILICON

被引：7

作者：

LAIHO, R ^{[1
]}

VLASENKO, LS ^{[1
]}

AFANASIEV, MM ^{[1
]}

VLASENKO, MP ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST, DEPT SOLID STATE PHYS, ST PETERSBURG 194021, RUSSIA

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 07期

关键词：

D O I：

10.1063/1.357313

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron paramagnetic resonance (EPR) of centers produced in porous silicon (PS) by heat treatment in air is investigated. The properties of these centers are compared with the defects present in as-prepared PS or activated by treatment of the specimens with ethanol. The native defects of PS and those produced by thermal annealing show different saturation behavior of the EPR spectra when the microwave power is increased. Also, their spin-dependent recombination processes are different. The dependence of the EPR line intensity on the thermal annealing time at temperatures of 150-500-degrees-C obeys a law characteristic to a diffusion process with an activation energy of 0.9 eV. This value is close to the activation energy of oxidation of crystalline silicon surfaces with atomic oxygen.

引用

页码：4290 / 4293

页数：4

共 8 条

[1] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J].

CAPLAN, PJ ;

POINDEXTER, EH ;

DEAL, BE ;

RAZOUK, RR .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :5847-5854

[2] OZONE-INDUCED RAPID LOW-TEMPERATURE OXIDATION OF SILICON [J].

KAZOR, A ;

BOYD, IW .

APPLIED PHYSICS LETTERS, 1993, 63 (18) :2517-2519

[3] MAGNETIC-PROPERTIES OF LIGHT-EMITTING POROUS SILICON [J].

LAIHO, R ;

LAHDERANTA, E ;

VLASENKO, L ;

VLASENKO, M ;

AFANASIEV, M .

JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) :197-200

[4] ELECTRON-SPIN-RESONANCE INVESTIGATIONS OF OXIDIZED POROUS SILICON [J].

MEYER, BK ;

PETROVAKOCH, V ;

MUSCHIK, T ;

LINKE, H ;

OMLING, P ;

LEHMANN, V .

APPLIED PHYSICS LETTERS, 1993, 63 (14) :1930-1932

[5] NATURE OF P-B-LIKE DANGLING-ORBITAL CENTERS IN LUMINESCENT POROUS SILICON [J].

RONG, FC ;

HARVEY, JF ;

POINDEXTER, EH ;

GERARDI, GJ .

APPLIED PHYSICS LETTERS, 1993, 63 (07) :920-922

[6] LUMINESCENCE DEGRADATION IN POROUS SILICON [J].

TISCHLER, MA ;

COLLINS, RT ;

STATHIS, JH ;

TSANG, JC .

APPLIED PHYSICS LETTERS, 1992, 60 (05) :639-641

[7] DEFECTS IN POROUS P-TYPE SI - AN ELECTRON-PARAMAGNETIC-RESONANCE STUDY [J].

VONBARDELEBEN, HJ ;

STIEVENARD, D ;

GROSMAN, A ;

ORTEGA, C ;

SIEJKA, J .

PHYSICAL REVIEW B, 1993, 47 (16) :10899-10902

[8] INVESTIGATION OF POROUS SILICON BY SCANNING-TUNNELING-MICROSCOPY AND ATOMIC-FORCE MICROSCOPY [J].

YU, T ;

LAIHO, R ;

HEIKKILA, L .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04) :2437-2439

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