ELECTRON-SPIN-RESONANCE INVESTIGATIONS OF OXIDIZED POROUS SILICON

被引：42

作者：

MEYER, BK

PETROVAKOCH, V

MUSCHIK, T

LINKE, H

OMLING, P

LEHMANN, V

机构：

[1] LUND UNIV,DEPT SOLID STATE PHYS,S-22100 LUND,SWEDEN

[2] SIEMENS AG,RES LABS,W-8000 MUNICH,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 14期

关键词：

D O I：

10.1063/1.110652

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The defect properties of rapidly thermally oxidized porous silicon are studied by electron paramagnetic resonance. Two different types of defects can be distinguished. One is very similar to the defects observed in damaged crystalline or amorphous Si, whereas the second one is closely related to the P(b), center. A maximum defect density of 8 X 10(18) cm-3 is observed for samples annealed at about 600-degrees-C. The intensity of the photoluminescence band at 1.7 eV anticorrelates with the density of the defects.

引用

页码：1930 / 1932

页数：3

共 16 条

[1] ELECTRON-PARAMAGNETIC RESONANCE STUDY OF POROUS SILICON [J].