NATURE OF P-B-LIKE DANGLING-ORBITAL CENTERS IN LUMINESCENT POROUS SILICON

被引：38

作者：

RONG, FC ^{[1
]}

HARVEY, JF ^{[1
]}

POINDEXTER, EH ^{[1
]}

GERARDI, GJ ^{[1
]}

机构：

[1] WILLIAM PATERSON COLL NEW JERSEY,WAYNE,NJ 07470

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 07期

关键词：

D O I：

10.1063/1.109845

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The P(b)-like dangling-orbit centers in luminescent porous silicon (LPSi) have been enhanced to very high concentration (10(15) cm-2) by gentle oxidation. High signal-to-noise ratio and very sharp lines enable the g-value maps, and Si-29 hyperfine and superhyperfine structures to be clearly resolved by ordinary EPR. Only one P(b)-like center is observed, and it is proven to be of the P(b0) variety (.Si=Si3). The relative EPR signal strengths from different g limbs indicate that the LPSi crystallite morphology is not dominated by needles or platelets.

引用

页码：920 / 922

页数：3

共 20 条

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