INVESTIGATION OF POROUS SILICON BY SCANNING-TUNNELING-MICROSCOPY AND ATOMIC-FORCE MICROSCOPY

被引：15

作者：

YU, T ^{[1
]}

LAIHO, R ^{[1
]}

HEIKKILA, L ^{[1
]}

机构：

[1] INST SEMICOND,BEIJING 100083,PEOPLES R CHINA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 04期

关键词：

D O I：

10.1116/1.587778

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The size and distribution of surface features of porous silicon layers have been investigated by scanning tunneling and atomic force microscopy. Pores and hillocks down to 1-2 nm size were observed, with their shape and distribution on the sample surface being influenced by crystallographic effects. The local density of electronic states show a strong increase above 2 eV, in agreement with recent theoretical predictions.

引用

收藏

页码：2437 / 2439

页数：3

相关论文

共 17 条

[1] SCANNING PROBE MICROSCOPY AND SCANNING TUNNELING SPECTROSCOPY OF POROUS SILICON [J].

AMISOLA, GB ;

BEHRENSMEIER, R ;

GALLIGAN, JM ;

OTTER, FA ;

NAMAVAR, F ;

KALKORAN, NM .

APPLIED PHYSICS LETTERS, 1992, 61 (21) :2595-2597

[2]

AVERKIEV NS, 1992, JETP LETT+, V55, P657

[3] TUNNELLING FROM A MANY-PARTICLE POINT OF VIEW [J].

BARDEEN, J .

PHYSICAL REVIEW LETTERS, 1961, 6 (02) :57-&

[4] AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON [J].

BEALE, MIJ ;

BENJAMIN, JD ;

UREN, MJ ;

CHEW, NG ;

CULLIS, AG .

JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) :622-636

[5] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[6]

ENACHESCU M, 1992, 21ST P INT C PHYS SE, V2, P1439

[7] VISIBLE LUMINESCENCE FROM SILICON-WAFERS SUBJECTED TO STAIN ETCHES [J].

FATHAUER, RW ;

GEORGE, T ;

KSENDZOV, A ;

VASQUEZ, RP .

APPLIED PHYSICS LETTERS, 1992, 60 (08) :995-997

[8] VISIBLE PHOTOLUMINESCENCE OF SILICON-BASED NANOSTRUCTURES - POROUS SILICON AND SMALL SILICON-BASED CLUSTERS [J].

KANEMITSU, Y ;

SUZUKI, K ;

UTO, H ;

MASUMOTO, Y ;

MATSUMOTO, T ;

KYUSHIN, S ;

HIGUCHI, K ;

MATSUMOTO, H .

APPLIED PHYSICS LETTERS, 1992, 61 (20) :2446-2448

[9]

LAIHO R, 1992, 21 INT C SEM BEIJ AU, V2, P1471

[10] POROUS SILICON FORMATION - A QUANTUM WIRE EFFECT [J].

LEHMANN, V ;

GOSELE, U .

APPLIED PHYSICS LETTERS, 1991, 58 (08) :856-858