OZONE-INDUCED RAPID LOW-TEMPERATURE OXIDATION OF SILICON

被引：43

作者：

KAZOR, A

BOYD, IW

机构：

[1] Electronic and Electrical Engineering, University College London, London WC1E7JE, Torrington Place

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 18期

关键词：

D O I：

10.1063/1.110467

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the use of ozone enriched oxygen to induce rapid oxidation of silicon at temperatures up to 550-degrees-C. The growth rates induced under these conditions were well over an order of magnitude larger than those achieved using pure dry oxygen. At 550-degrees-C films up to 260 angstrom in thickness were grown 4 h producing a growth rate comparable to that for conventional oxidation at 850-degrees-C.

引用

页码：2517 / 2519

页数：3

共 15 条

[1] DECONVOLUTION OF THE INFRARED-ABSORPTION PEAK OF THE VIBRATIONAL STRETCHING MODE OF SILICON DIOXIDE - EVIDENCE FOR STRUCTURAL ORDER [J].