Visible electroluminescence from Si+-implanted SiO2 films thermally grown on crystalline Si

被引：41

作者：

Liao, LS ^{[1
]}

Bao, XM ^{[1
]}

Li, NS ^{[1
]}

Zheng, XQ ^{[1
]}

Min, NB ^{[1
]}

机构：

[1] NANJING UNIV,NATL LAB SOLID STATE MICROSTRUCT,NANJING 210093,PEOPLES R CHINA

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 97卷 / 12期

基金：

中国国家自然科学基金;

关键词：

nanostructures; optical properties; luminescence;

D O I：

10.1016/0038-1098(95)00846-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Thermally grown SiO2 films on p-type crystalline Si wafers were implanted with Si+, and metal-insulator-semiconductor (MIS) structures were fabricated with a semitransparent Au layer on the top of the SiO2 films. The MIS structures exhibit electroluminescence (EL) under forward bias. The EL spectrum has a main peak at similar to 2.0 eV and a shoulder at similar to 1.7 eV, which is similar to the photoluminescence of the same implanted SiO2 films. The EL mechanism is also discussed.

引用

页码：1039 / 1042

页数：4

共 15 条

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