VISIBLE PHOTOLUMINESCENCE IN SI+-IMPLANTED THERMAL OXIDE-FILMS ON CRYSTALLINE SI

We have investigated visible photoluminescence excited by Ar ion laser (488 nm, 2.54 eV) at room temperature from Si+-implanted thermal oxide films grown on crystalline Si wafer, as-implanted and after subsequent annealing in vacuum. We found two types of visible luminescence bands and after subsequent annealing in vacuum. We found two types of visible luminescence bands similar to those of silica glasses; one band is observed in as-implanted specimens and disappears after heating to about 600-degrees-C, and the other band is observed only after heating the specimens to about 1100-degrees-C. Though the shapes of these luminescence spectra are different from those having been observed in Si+-implanted silica glass, the origins of these bands are the same as in silica glass. We discuss the similarities and the differences of luminescence bands in Si+-implanted silica glasses and thermal oxide films grown on crystalline Si. (C) 1994 American Institute of Physics.