Electronic processes in hydrogenated amorphous carbon

被引:51
作者
Robertson, J
机构
[1] Engineering Department, Cambridge University
关键词
D O I
10.1016/0022-3093(95)00775-X
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
It is shown that disorder limits the degree of clustering of sp(2) sites in a-C:H to relatively small sizes. The optical gap is still controlled by the configuration of sp(2) sites. Experimentally, the gap appears to increase linearly with sp(3) content for all types of a-C:H. The photoluminescence of a-C:H is shown to follow basically the a-Si:H model, with gap states acting as non-radiative centers, the sp(2) cluster states acting like conventional tail states, but with a faster radiative rate, wider band tails, and shorter tail state Bohr radii.
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收藏
页码:615 / 618
页数:4
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