Terahertz evanescent field microscopy of dielectric materials using on-chip waveguides

被引：21

作者：

Cunningham, J. ^{[1
]}

Byrne, M. ^{[1
]}

Upadhya, P. ^{[1
]}

Lachab, M. ^{[1
]}

Linfield, E. H. ^{[1
]}

Davies, A. G. ^{[1
]}

机构：

[1] Univ Leeds, Sch Elect & Elect Engn, Leeds LS2 9JT, W Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2835705

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate an evanescent field modality for terahertz frequency time-domain measurements, based on the interaction between a sample and the evanescent field extending above lithographically defined terahertz waveguides. We quantify this interaction using freely positionable dielectric samples (GaAs) moved in close proximity to the waveguide (a terahertz microstrip line), finding a reduction in the microstrip-propagating pulse amplitude and an increase in its time delay when the dielectric is brought into the microstrip evanescent field. We also show that the frequency response of resonant passive circuit elements (stub band-stop filters), integrated into the microstrip line, can be used to determine the terahertz frequency properties of scanned samples, opening the way for a terahertz subwavelength imaging modality, the resolution of which is limited by lithographic constraints, rather than by free-space diffraction. (c) 2008 American Institute of Physics.

引用

页数：3

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