True atomic resolution imaging of surface structure and surface charge on the GaAs(110)

被引：55

作者：

Sugawara, Y ^{[1
]}

Uchihashi, T ^{[1
]}

Abe, M ^{[1
]}

Morita, S ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Dept Elect Engn, Suita, Osaka 5650871, Japan

来源：

APPLIED SURFACE SCIENCE | 1999年 / 140卷 / 3-4期

关键词：

atomic resolution; electrostatic force microscope; atomic force microscope; defect;

D O I：

10.1016/S0169-4332(98)00557-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We demonstrated a novel method to detect the van der Weals and the electrostatic force interactions simultaneously on an atomic scale, which is based on frequency modulation detection method. For the first time, the surface structure and the surface charge at atomic-scale point defects on the GaAs(110) surface have been simultaneously resolved with true atomic resolution under ultra-high vacuum condition. From the bias voltage dependence of the image contrast, we can verify that the sign of the atomically resolved surface charge at the point defect was positive. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：371 / 375

页数：5

共 19 条

[1] FREQUENCY-MODULATION DETECTION USING HIGH-Q CANTILEVERS FOR ENHANCED FORCE MICROSCOPE SENSITIVITY [J].

ALBRECHT, TR ;

GRUTTER, P ;

HORNE, D ;

RUGAR, D .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (02) :668-673

[2] Microscopic identification of the compensation mechanisms in Si-doped GaAs [J].

Domke, C ;

Ebert, P ;

Heinrich, M ;

Urban, K .

PHYSICAL REVIEW B, 1996, 54 (15) :10288-10291

[3] Inequivalent atoms and imaging mechanisms in ac-mode atomic-force microscopy of Si(111)7x7 [J].

Erlandsson, R ;

Olsson, L ;

Martensson, P .

PHYSICAL REVIEW B, 1996, 54 (12) :R8309-R8312

[4]

GIESSIBL FJ, 1995, SCIENCE, V267, P1451

[5] FABRICATION OF CANTILEVER WITH ULTRASHARP AND HIGH-ASPECT-RATIO STYLUS FOR SCANNING MAXWELL-STRESS MICROSCOPY [J].

ITOH, J ;

TOHMA, Y ;

INOUE, T ;

YOKOYAMA, H ;

SHIMIZU, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (12B) :7167-7170

[6] SILICON PN JUNCTION IMAGING AND CHARACTERIZATIONS USING SENSITIVITY ENHANCED KELVIN PROBE FORCE MICROSCOPY [J].

KIKUKAWA, A ;

HOSAKA, S ;

IMURA, R .

APPLIED PHYSICS LETTERS, 1995, 66 (25) :3510-3512

[7] OBSERVATION OF 7X7 RECONSTRUCTED STRUCTURE ON THE SILICON (111) SURFACE USING ULTRAHIGH-VACUUM NONCONTACT ATOMIC-FORCE MICROSCOPY [J].

KITAMURA, S ;

IWATSUKI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (1B) :L145-L148

[8] HIGH-RESOLUTION CAPACITANCE MEASUREMENT AND POTENTIOMETRY BY FORCE MICROSCOPY [J].

MARTIN, Y ;

ABRAHAM, DW ;

WICKRAMASINGHE, HK .

APPLIED PHYSICS LETTERS, 1988, 52 (13) :1103-1105

[9] Site discrimination of adatoms in Si(111)-7x7 by noncontact atomic force microscopy [J].

Nakagiri, N ;

Suzuki, M ;

Okiguchi, K ;

Sugimura, H .

SURFACE SCIENCE, 1997, 373 (01) :L329-L332

[10] KELVIN PROBE FORCE MICROSCOPY [J].

NONNENMACHER, M ;

OBOYLE, MP ;

WICKRAMASINGHE, HK .

APPLIED PHYSICS LETTERS, 1991, 58 (25) :2921-2923

← 1 2 →