Visible spectrum (645 nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In0.46Ga0.54P quantum wells

被引：24

作者：

Walter, G ^{[1
]}

Elkow, J

Holonyak, N

Heller, RD

Zhang, XB

Dupuis, RD

机构：

[1] Univ Illinois, Elect Engn Res Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Ctr Compound Semicond Microelect, Urbana, IL 61801 USA

[3] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 05期

关键词：

D O I：

10.1063/1.1645674

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented that demonstrate the continuous wave room-temperature transverse-electric field (TE) visible-spectrum (645 nm) heterostructure laser operation of single-layer compressively strained 3.75 monolayer equivalent InP quantum dots (QDs) coupled to 60 Angstrom wide tensile-strained In0.46Ga0.54P quantum wells (QWs). The simple stripe geometry (200 mumx4 mum) InP QD+InGaP QW heterostructure laser is capable of high performance despite the coupling of two competing recombination systems. The InP QD+InGaP QW laser exhibits low threshold (similar to31 mA), high quantum efficiency (72%, similar to1.38 mW/mA), a relatively high characteristic temperature T-0 of 69 K, and a shift in wavelength at temperature of 0.19 nm/degreesC. (C) 2004 American Institute of Physics.

引用

页码：666 / 668

页数：3

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