Synchrotron radiation excited etching of diamond

被引:6
作者
Ohashi, H
Ishiguro, E
Sasano, T
Shobatake, K
机构
[1] UNIV RYUKYUS, COLL EDUC, NISHIHARA, OKINAWA 9031, JAPAN
[2] OSAKA CITY UNIV, DEPT APPL PHYS, SUMIYOSHI KU, OSAKA 558, JAPAN
[3] NAGOYA UNIV, GRAD SCH ENGN, CHIKUSA KU, NAGOYA, AICHI 46401, JAPAN
[4] INST MOLEC SCI, DEPT MOL ASSEMBLIES, OKAZAKI, AICHI 444, JAPAN
关键词
D O I
10.1063/1.115982
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have succeeded in synchrotron radiation (SR) excited etching of crystalline diamond. It proceeds even at low temperatures at which diamond is thermally not oxidized in the gaseous environment. It has been demonstrated that any of the three types of crystalline diamond, i.e., industrial diamond made at high pressures, thin films grown by chemical vapor deposition, and natural diamond, can be etched by irradiating SR in the O-2 atmosphere. From the etched pattern obtained by placing a Ni mesh made of 40 mu m wires above the sample, it has been concluded that only the irradiated area is etched and thus surface excitation by SR is essential along with the supply of reactive radical species formed by photodissociation. (C) 1996 American Institute of Physics.
引用
收藏
页码:3713 / 3715
页数:3
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