共 25 条
Mechanism of Cs2CO3 as an n-type dopant in organic electron-transport film
被引:70
作者:
Cai, Y.
[1
]
Wei, H. X.
[1
]
Li, J.
[1
]
Bao, Q. Y.
[1
]
Zhao, X.
[2
]
Lee, S. T.
[3
]
Li, Y. Q.
[1
]
Tang, J. X.
[1
]
机构:
[1] Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China
[2] Suzhou Univ Sci & Technol, Coll Chem & Biol Engn, Suzhou 215011, Peoples R China
[3] City Univ Hong Kong, Dept Phys & Mat Sci, Ctr Super Diamond & Adv Films COSDAF, Hong Kong, Hong Kong, Peoples R China
基金:
高等学校博士学科点专项科研基金;
关键词:
LIGHT-EMITTING DEVICES;
THIN-FILMS;
HIGH-EFFICIENCY;
CATHODE;
PERFORMANCE;
IMPROVEMENT;
INJECTION;
LAYER;
D O I:
10.1063/1.3567526
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
The electronic structures of cesium carbonate (Cs2CO3) doped 4,7-diphenyl-1,10-phenanthroline (BPhen) films with various doping concentration are characterized by in situ ultraviolet and x-ray photoelectron spectroscopies, in an attempt to understand the mechanism of electron-transport enhancement in Cs2CO3-doped organic electron-transport layer for organic optoelectronic devices. The n-type electrical doping effect is evidenced by the Fermi level shift in the Cs2CO3-doped BPhen films toward unoccupied molecular states with increasing doping concentration, leading to increase in electron concentration in the electron-transport layer and reduction in electron injection barrier height. These findings originate from energetically favorable electron transfer from Cs2CO3 to BPhen. (C) 2011 American Institute of Physics. [doi:10.1063/1.3567526]
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