Mechanism of Cs2CO3 as an n-type dopant in organic electron-transport film

被引:70
作者
Cai, Y. [1 ]
Wei, H. X. [1 ]
Li, J. [1 ]
Bao, Q. Y. [1 ]
Zhao, X. [2 ]
Lee, S. T. [3 ]
Li, Y. Q. [1 ]
Tang, J. X. [1 ]
机构
[1] Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China
[2] Suzhou Univ Sci & Technol, Coll Chem & Biol Engn, Suzhou 215011, Peoples R China
[3] City Univ Hong Kong, Dept Phys & Mat Sci, Ctr Super Diamond & Adv Films COSDAF, Hong Kong, Hong Kong, Peoples R China
基金
高等学校博士学科点专项科研基金;
关键词
LIGHT-EMITTING DEVICES; THIN-FILMS; HIGH-EFFICIENCY; CATHODE; PERFORMANCE; IMPROVEMENT; INJECTION; LAYER;
D O I
10.1063/1.3567526
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electronic structures of cesium carbonate (Cs2CO3) doped 4,7-diphenyl-1,10-phenanthroline (BPhen) films with various doping concentration are characterized by in situ ultraviolet and x-ray photoelectron spectroscopies, in an attempt to understand the mechanism of electron-transport enhancement in Cs2CO3-doped organic electron-transport layer for organic optoelectronic devices. The n-type electrical doping effect is evidenced by the Fermi level shift in the Cs2CO3-doped BPhen films toward unoccupied molecular states with increasing doping concentration, leading to increase in electron concentration in the electron-transport layer and reduction in electron injection barrier height. These findings originate from energetically favorable electron transfer from Cs2CO3 to BPhen. (C) 2011 American Institute of Physics. [doi:10.1063/1.3567526]
引用
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页数:3
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