Critical disorder and phase transitions in random diode arrays

被引：13

作者：

Karpov, VG ^{[1
]}

机构：

[1] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.91.226806

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Random diode arrays represent a new class of nonlinear disordered systems related to the physics of thin-film semiconductor structures and some others. When a disorder strength grows through a certain critical value, they undergo a phase transition from almost uniform to strongly nonuniform random electric potential. A piecewise continuous topography of random potential is predicted.

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页数：4

相关论文

共 8 条

[1] QUANTUM NOISE-CORRELATED OPERATION OF ELECTRICALLY COUPLED SEMICONDUCTOR LIGHT EMITTERS [J].

EDWARDS, PJ ;

POLLARD, GH .

PHYSICAL REVIEW LETTERS, 1992, 69 (12) :1757-1760

[2] Effects of nonuniformity in thin-film photovoltaics [J].

Karpov, VG ;

Compaan, AD ;

Shvydka, D .

APPLIED PHYSICS LETTERS, 2002, 80 (22) :4256-4258

[3] Metal-molecule contacts and charge transport across monomolecular layers: Measurement and theory [J].

Kushmerick, JG ;

Holt, DB ;

Yang, JC ;

Naciri, J ;

Moore, MH ;

Shashidhar, R .

PHYSICAL REVIEW LETTERS, 2002, 89 (08)

[4] Stochastic heterostructures and diodium in B/N-doped carbon nanotubes [J].

Lammert, PE ;

Crespi, VH ;

Rubio, A .

PHYSICAL REVIEW LETTERS, 2001, 87 (13) :1-136402

[5]

Luque A., 2003, Handbook of Photovoltaic Science and Engineering

[6] Low-light divergence in photovoltaic parameter fluctuations [J].

Shvydka, D ;

Karpov, VG ;

Compaan, AD .

APPLIED PHYSICS LETTERS, 2003, 82 (13) :2157-2159

[7]

Sze S. M., 1981, PHYS SEMICONDUCTOR D

[8] Nonlinear spin-polarized transport through a ferromagnetic domain wall -: art. no. 098302 [J].

Vignale, G ;

Flatté, ME .

PHYSICAL REVIEW LETTERS, 2002, 89 (09) :983021-983024