Fabrication of high performance pentacene thin film transistors using poly(4-vinylphenol) as the gate insulator on polyethyleneterephthalate substrates

被引：39

作者：

Byun, HS ^{[1
]}

Xu, YM ^{[1
]}

Song, CK ^{[1
]}

机构：

[1] Dong A Univ, Div Elect & Elect & Comp Engn, Pusan 604714, South Korea

来源：

THIN SOLID FILMS | 2005年 / 493卷 / 1-2期

关键词：

dielectrics; electrical properties and measurements; electronic devices; organic semiconductors; OTFT; organic insulator; PVP; PET;

D O I：

10.1016/j.tsf.2005.07.200

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pentacene thin film transistors (TFTs) were fabricated by using poly(4-vinylphenol) as the gate insulator and pentacene as the organic semiconductor on polyethyleneterephthalate substrates. The TFTs were characterized and the following parameters were obtained: a mobility of 0.8 cm(2)/Vs +/- 0.2 cm(2)/Vs, an on/off current ratio of 10(6) and a subthreshold slope of 1.0 V/dec. Inverter circuits based on the organic TFTs exhibited transfer curves typical of inverters with gains of 9.7 and a little hysteresis, which is indicative of a small number of interface states. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：278 / 281

页数：4

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