Cd2+/NH3 treatment of Cu(In,Ga)(S,Se)2 thin-filin solar cell absorbers:: A model for the performance-enhancing processes in the partial electrolyte

被引：14

作者：

Bär, M

Weinhardt, L

Heske, C

Muffler, HJ

Lux-Steiner, MC

Umbach, E

Fischer, CH

机构：

[1] Hahn Meitner Inst Berlin GmbH, Dept SE 2, D-14109 Berlin, Germany

[2] Univ Wurzburg, D-97074 Wurzburg, Germany

[3] Univ Nevada, Dept Chem, Las Vegas, NV 89154 USA

[4] Free Univ Berlin, D-14195 Berlin, Germany

来源：

PROGRESS IN PHOTOVOLTAICS | 2005年 / 13卷 / 07期

关键词：

partial electrolyte treatment; chalcopyrite thin film solar cells; surface modification; stability constants;

D O I：

10.1002/pip.618

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

To obtain highly efficient chalcopyrite-based thin-film solar cells where the conventionally used US buffer is replaced by a ZnO layer prepared by the ILGAR (ion layer gas reaction) process, the Cu(In,Ga)(S,Se)(2) absorber has to be pretreated in a Cd2+/NH3 solution. Based an the measured characteristics of the pH-value in the Cd2+/NH3 solution during Me treatment, a model of the processes in the bath call be established. The conclusions are correlated with results from X-ray-photoelectron and Xray-excited Auger electron spectroscopy of the Cd2+/NH3-treated Cu(In,Ga)(S,Se)(2) surface, giving an explanation for the observed formation of Cd-compounds on the surface of the absorber. Copyright (c) 2005 John Wiley & Sons, Ltd.

引用

页码：571 / 577

页数：7

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