CdS and Cd(OH)2 formation during Cd treatments of Cu(In,Ga)(S,Se)2 thin-film solar cell absorbers

被引：75

作者：

Weinhardt, L ^{[1
]}

Gleim, T

Fuchs, O

Heske, C

Umbach, E

Bär, M

Muffler, HJ

Fischer, CH

Lux-Steiner, MC

Zubavichus, Y

Niesen, TP

Karg, F

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

[2] Hahn Meitner Inst Berlin GmbH, Dept SE 2, D-14109 Berlin, Germany

[3] Heidelberg Univ, D-69120 Heidelberg, Germany

[4] Shell Solar, D-81739 Munich, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 04期

关键词：

D O I：

10.1063/1.1539553

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface modifications induced by treating Cu(In,Ga)(S,Se)(2) films in an aqueous ammonia hydroxide-based solution of Cd2+ ions-as used in record Cu(In,Ga)(S,Se)(2) solar cells without a CdS buffer layer-have been investigated for different Cd2+ concentrations. Employing a combination of x-ray photoelectron spectroscopy, Auger electron spectroscopy, and x-ray emission spectroscopy, it is possible to distinguish two different surface modifications. For Cd2+ concentrations below 4.5 mM in the solution we observe the formation of a CdS monolayer, while higher Cd2+ concentrations lead to the additional deposition of a cadmium hydroxide film on the CdS/Cu(In,Ga)(S,Se)(2) surface. (C) 2003 American Institute of Physics.

引用

页码：571 / 573

页数：3

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