Damp-heat induced sulfate formation in Cu(In,Ga)(S,Se)2-based thin film solar cells

被引:27
作者
Heske, C [1 ]
Groh, U
Weinhardt, L
Fuchs, O
Holder, B
Umbach, E
Bostedt, C
Terminello, LJ
Zweigart, S
Niesen, TP
Karg, F
机构
[1] Univ Wurzburg, D-97074 Wurzburg, Germany
[2] Lawrence Livermore Natl Lab, Livermore, CA 94551 USA
[3] Shell Solar GmbH, D-81739 Munich, Germany
关键词
D O I
10.1063/1.1525884
中图分类号
O59 [应用物理学];
学科分类号
摘要
To investigate the impact of damp heat treatments on the electronic and chemical structure of Cu(In,Ga)(S,Se)(2)-based thin film solar cells, we have performed a detailed soft x-ray emission study of the ZnO/CuIn(S,Se)(2) and ZnO/CdS/CuIn(S,Se)(2) interfaces. By comparing the sulfur L-2,L-3 emission spectra of pristine and damp-heat treated samples, we find a sulfate formation at the ZnO/CuIn(S,Se)(2) and the ZnO/CdS interface. The intensity behavior as a function of ZnO film thickness further reveals a diffusion of sulfur atoms into the ZnO film, leading to the formation of zinc sulfate in the ZnO window layer of damp-heat-treated Cu(In,Ga)(S,Se)(2)-based solar cells. (C) 2002 American Institute of Physics.
引用
收藏
页码:4550 / 4552
页数:3
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