Metal node contact TFT SRAM cell for high-speed, low-voltage applications

被引：2

作者：

Son, KS ^{[1
]}

Kwon, SW

Lee, YJ

Kim, DH

机构：

[1] Hyundai Elect Ind Co Ltd, Memory Prod & Technol Dev Div, Kyungki Do 467701, South Korea

[2] Pohang Univ Sci & Technol, Dept Elect Engn, Pohang 790784, Kyungbuk, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 04期

关键词：

SRAM; TFT;

D O I：

10.1109/16.753719

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The parasitic diode contact in the bottom gate thin-film transistor (TFT) static random access memory (SRAM) cell limits its high node charging current. The charging of 15 fF load capacitor to 0.1-0.2 V below V-cc takes about 0.65 ms. This adverse effect is circumvented in the metal contact TFT SRAM cell, whose charging to full V-cc is seven times faster.

引用

页码：805 / 806

页数：2

共 4 条

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[3]

McNelly TF, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P927, DOI 10.1109/IEDM.1995.499368

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