Differences in nature of defects between SrBi2Ta2O9 and Bi4Ti3O12

被引：243

作者：

Park, BH ^{[1
]}

Hyun, SJ

Bu, SD

Noh, TW

Lee, J

Kim, HD

Kim, TH

Jo, W

机构：

[1] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea

[2] Seoul Natl Univ, Condensed Matter Res Inst, Seoul 151742, South Korea

[3] Sungkyunkwan Univ, Dept Mat Engn, Suwon 440746, South Korea

[4] Seoul Natl Univ, Dept Phys, Seoul 130743, South Korea

[5] LG Corp Inst Technol, Seoul 137140, South Korea

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 13期

关键词：

D O I：

10.1063/1.123709

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray photoemission spectroscopy measurements were executed to compare the nature of defects in SrBi2Ta2O9 (SBT) and Bi4Ti3O12 (BTO) films. In the SBT film, it was found that the oxygen ions at the metal-oxygen octahedra were much more stable than those at the Bi2O2 layers. On the other hand, for the BTO film, oxygen vacancies could be induced both at the titanium-oxygen octahedra and at the Bi2O2 layers. We suggested that the difference in stability of the metal-oxygen octahedra should be related to different fatigue behaviors of the SBT and the BTO films. (C) 1999 American Institute of Physics.

引用

页码：1907 / 1909

页数：3

共 13 条

[1] FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES [J].