Effects of interface charges on imprint of epitaxial Bi4Ti3O12 thin films

被引:60
作者
Park, BH
Noh, TW
Lee, J
Kim, CY
Jo, W
机构
[1] SEOUL NATL UNIV, CONDENSED MATTER RES INST, SEOUL 151742, SOUTH KOREA
[2] SUNGKYUNKWAN UNIV, DEPT MAT ENGN, SUWON 440746, SOUTH KOREA
[3] LG ELECT RES CTR, SEOCHO GU, SEOUL 137140, SOUTH KOREA
关键词
D O I
10.1063/1.118497
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using La0.5Sr0.5CoO3 (LSCO) or Pt film as a bottom electrode layer, epitaxial Bi4Ti3O12 (BTO) thin films were grown on MgO(001) substrates by pulsed laser deposition. A symmetric Pt/BTO/Pt capacitor structure shows a surprisingly large asymmetric polarization switching behavior, but a Pt/BTO/LSCO structure has a nearly symmetric P-V hysteresis. The strong asymmetric behavior in the Pt/BTO/Pt was attributed to positive charges resulting from interdiffusion at the bottom BTO/Pt interface. P-V hysteresis studies using numerous top electrode materials and Auger electron spectroscopy depth profile measurement also support formation of interfacial charges. Imprint pulse test shows that such an imprint failure cannot be recovered by applying a de bias field. (C) 1997 American Institute of Physics.
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收藏
页码:1101 / 1103
页数:3
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