Enhanced tunnel magnetoresistance due to spin dependent quantum well resonance in specific symmetry states of an ultrathin ferromagnetic electrode

被引：40

作者：

Niizeki, Tomohiko ^{[1
]}

Tezuka, Nobuki ^{[1
,2
]}

Inomata, Koichiro ^{[1
,2
,3
]}

机构：

[1] CREST JST, Kawaguchi, Saitama 3320012, Japan

[2] Tohoku Univ, Dept Mat Sci, Sendai, Miyagi 9808579, Japan

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.100.047207

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Spin dependent quantum well resonance has been investigated in fully epitaxial magnetic tunnel junctions with Fe(001)/MgO(001)/ultrathin Fe(001)/Cr(001) structure. The dI/dV spectra clearly show the resonant peaks which shift systematically depending on the thickness of an ultrathin electrode as predicted in ab initio calculation [Zhong-Yi Lu , Phys. Rev. Lett. 94, 207210 (2005)]. The magnetotransport is strongly modulated at the same bias voltage as the resonant peaks. This control of the magnetotransport in magnetic tunnel junctions at a specific bias voltage will contribute to the development of active spintronic devices.

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页数：4

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