Charge transfer and Fermi level shift in p-doped single-walled carbon nanotubes -: art. no. 205423

被引：210

作者：

Zhou, W ^{[1
]}

Vavro, J

Nemes, NM

Fischer, JE

Borondics, F

Kamarás, K

Tanner, DB

机构：

[1] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA

[2] Hungarian Acad Sci, Res Inst Solid State Phys & Opt, Budapest, Hungary

[3] Univ Florida, Dept Phys, Gainesville, FL 32611 USA

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.71.205423

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic properties of p-doped single-walled carbon nanotube (SWNT) bulk samples were studied by temperature-dependent resistivity and thermopower, optical reflectivity, and Raman spectroscopy. These all give consistent results for the Fermi level downshift (Delta E(F)) induced by doping. We find Delta E(F) approximate to 0.35 eV and 0.50 eV for concentrated nitric and sulfuric acid doping respectively. With these values, the evolution of Raman spectra can be explained by variations in the resonance condition as E(F) moves down into the valence band. Furthermore, we find no evidence for diameter-selective doping, nor any distinction between doping responses of metallic and semiconducting tubes.

引用

页数：7

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