Effect of diffusion on ion beam-synthesized PbS nanocrystals

被引：7

作者：

de Lamaestre, RE ^{[1
]}

Bernas, H

Jomard, F

机构：

[1] Univ Paris 11, CNRS, CSNSM, F-91405 Orsay, France

[2] Fontainbleau Res Ctr, Corning SA, F-77210 Avon, France

[3] CNRS, LPSB, F-92195 Meudon, France

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2004年 / 216卷

关键词：

PbS; nanocrystals; ion implantation; SIMS; TEM;

D O I：

10.1016/j.nimb.2003.11.067

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Combining secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM), we show that nucleation of PbS nanocrystals formed via co-implantation in pure silica is critically dependent on the post-implant diffusion properties of Pb and S. Upon annealing, implanted Pb diffuses classically whereas only a few percent of the implanted S diffuses significantly. After annealing at 850 degreesC/l h, the depth distribution of nanocrystals is no longer determined by the less concentrated element rather than the initial concentration profiles. Our results emphasize the role of glass chemistry in composite nanocrystal formation. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：402 / 406

页数：5

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