Encapsulated nanocrystals and quantum dots formed by ion beam synthesis

被引：49

作者：

White, CW

Budai, JD

Withrow, SP

Zhu, JG

Pennycook, SJ

Zuhr, RA

Hembree, DM

Henderson, DO

Magruder, RH

Yacaman, MJ

Mondragon, G

Prawer, S

机构：

[1] OAK RIDGE Y-12 PLANT, OAK RIDGE, TN USA

[2] FISK UNIV, NASHVILLE, TN USA

[3] VANDERBILT UNIV, NASHVILLE, TN USA

[4] Univ Nacl Autonoma Mexico, MEXICO CITY, DF, MEXICO

[5] UNIV MELBOURNE, SCH PHYS, PARKVILLE, VIC 3052, AUSTRALIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1997年 / 127卷

关键词：

D O I：

10.1016/S0168-583X(96)00988-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

High-dose ion implantation has been used to synthesize a wide range of nanocrystals and quantum dots and to encapsulate them in host materials such as SiO2, alpha-Al2O3, and crystalline Si. When Si nanocrystals are encapsulated in SiO2, they exhibit dose dependent absorption and photoluminescence which provides insight into the luminescence mechanism, Compound semiconductor nanocrystals (both group III-V and group II-VI) can be formed in these matrices by sequential implantation of the individual constituents, and we discuss their synthesis and some of their physical and optical properties.

引用

页码：545 / 552

页数：8

共 33 条

[1] Semiconductor clusters, nanocrystals, and quantum dots [J].