Plasmon excitation modes in nanowire arrays

被引:28
作者
Sander, MS [1 ]
Gronsky, R
Lin, YM
Dresselhaus, MS
机构
[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[3] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
关键词
D O I
10.1063/1.1337940
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electron energy loss spectrometry and energy-filtered transmission electron microscopy reveal characteristic plasmon excitations in both isolated Bi nanowires and an array of Bi nanowires within an Al2O3 matrix. As the average nanowire diameter decreases from 90 to 35 nm, both the volume plasmon energy and peak width increase. In addition, a lower-energy excitation is present in a very localized region at the Bi-Al2O3 interface. These results are discussed in the context of quantum confinement and the influence of interfaces on the electronic properties of nanocomposite materials. (C) 2001 American Institute of Physics.
引用
收藏
页码:2733 / 2736
页数:4
相关论文
共 23 条
  • [11] Raether H., 1980, EXCITATION PLASMONS
  • [12] Fabrication and STEM/EELS measurements of nanometer-scale silicon tips and filaments
    Reed, BW
    Chen, JM
    MacDonald, NC
    Silcox, J
    Bertsch, GF
    [J]. PHYSICAL REVIEW B, 1999, 60 (08): : 5641 - 5652
  • [13] Sander MS, 2000, MATER RES SOC SYMP P, V581, P213
  • [14] SANDER MS, 2000, MATER RES SOC S P, V3, P681
  • [15] Low-loss EELS study of oxide-covered aluminum nanospheres
    Stockli, T
    Stadelmann, P
    Chatelain, A
    [J]. MICROSCOPY MICROANALYSIS MICROSTRUCTURES, 1997, 8 (02): : 145 - 155
  • [16] SEMICLASSICAL MODEL FOR THE INELASTIC-SCATTERING PROBABILITY OF ELECTRONS TRAVELING PARALLEL TO 4 DIELECTRIC LAYERS
    TUROWSKI, MA
    KELLY, TF
    BATSON, PE
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (06) : 3776 - 3786
  • [17] SURFACE-PLASMON AND INTERFACE-PLASMON MODES ON SMALL SEMICONDUCTING SPHERES
    UGARTE, D
    COLLIEX, C
    TREBBIA, P
    [J]. PHYSICAL REVIEW B, 1992, 45 (08) : 4332 - 4343
  • [18] ENERGY-FILTERING AND COMPOSITION-SENSITIVE IMAGING IN SURFACE AND INTERFACE STUDIES USING HREM
    WANG, ZL
    SHAPIRO, AJ
    [J]. ULTRAMICROSCOPY, 1995, 60 (01) : 115 - 135
  • [19] ELECTRON-ENERGY LOSS SPECTRA AND OPTICAL-CONSTANTS OF BISMUTH
    WEHENKEL, C
    GAUTHE, B
    [J]. SOLID STATE COMMUNICATIONS, 1974, 15 (03) : 555 - 558
  • [20] Processing and characterization of single-crystalline ultrafine bismuth nanowires
    Zhang, ZB
    Gekhtman, D
    Dresselhaus, MS
    Ying, JY
    [J]. CHEMISTRY OF MATERIALS, 1999, 11 (07) : 1659 - 1665