Site-selective x-ray absorption fine structure analysis of an optically active center in Er-doped semiconductor thin film using x-ray-excited optical luminescence

In order to discuss the local structure of an optically active center in Er-doped Si thin film, site-selective x-ray absorption fine structure (XAFS) analysis using x-ray-excited optical luminescence was performed. The XAFS spectrum at the Er L-III edge was obtained from the x-ray photon energy dependence of the peak intensity of infrared luminescence due to Er intra-4f transition. Although conventional XAFS measurement analyzes the average structure of all of the Er, this method intrinsically provides structural information for only optically active Er. A broad 2p-5d resonant peak in the site-selective XAFS spectrum is reproduced by a density-of-state calculation of a distorted ErO6 cluster, assuming an Er transformation from an octahedral center of 0.25 Angstrom. (C) 2001 American Institute of Physics.