Site-selective x-ray absorption fine structure:: Selective observation of Ga local structure in DX center of Al0.33Ga0.67As:Se

被引：25

作者：

Ishii, M ^{[1
]}

Yoshino, Y

Takarabe, K

Shimomura, O

机构：

[1] Japan Synchrotron Radiat Res Inst, Mikaduki, Hyogo 6795198, Japan

[2] Okayama Univ Sci, Okayama 700005, Japan

[3] Japan Atom Energy Res Inst, Mikaduki, Hyogo 6795143, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 18期

关键词：

D O I：

10.1063/1.123951

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to discuss the local structure of deep level carrier traps, the site-selective x-ray absorption fine structure (XAFS) by measuring the x-ray photon-energy dependence of the capacitance of a Schottky barrier diode is proposed. Dropping of the localized electron into a core hole arising from x-ray absorption of the atom in the carrier trap, not in bulk, increases the capacitance. The site-selective XAFS is adopted for the local structure analysis of DX center in Al0.33Ga0.67As:Se. The Ga K-edge site-selective XAFS is different from the conventional XAFS, suggesting that Ga in the DX center with a large lattice relaxation is selectively observed. (C) 1999 American Institute of Physics. [S0003-6951(99)01318-2].

引用

页码：2672 / 2674

页数：3

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