RELAXATION OF PERSISTENT PHOTOCONDUCTIVITY IN AL0.3GA0.7AS

被引:89
作者
LIN, JY [1 ]
DISSANAYAKE, A [1 ]
BROWN, G [1 ]
JIANG, HX [1 ]
机构
[1] KANSAS STATE UNIV AGR & APPL SCI,DEPT PHYS,CARDWELL HALL,MANHATTAN,KS 66506
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 09期
关键词
D O I
10.1103/PhysRevB.42.5855
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Stretched-exponential decay of persistent photoconductivity (PPC) has been observed in Al0.3Ga0.7As in the temperature region T<90 K. The decay time constant and exponent have been measured at different temperatures. Experimental results show that the thermal activated capture of electrons at the DX centers becomes negligible at T<40 K. However, a transition from a thermally activated to a nearly-temperature-independent tunneling capture at a temperature on the order of 40 K has been observed for the first time for Al0.3Ga0.7As, which is consistent with the multiphonon-emission model for DX centers of large lattice relaxation. © 1990 The American Physical Society.
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页码:5855 / 5858
页数:4
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