共 26 条
- [1] DONORS IN SEMICONDUCTORS AND METASTABILITY [J]. PHYSICAL REVIEW B, 1989, 40 (14): : 10006 - 10008
- [2] PHYSICAL MEANING OF ELECTRON-CAPTURE KINETICS ON DX CENTERS [J]. APPLIED PHYSICS LETTERS, 1988, 53 (19) : 1841 - 1843
- [4] ENERGETICS OF DX-CENTER FORMATION IN GAAS AND ALXGA1-XAS ALLOYS [J]. PHYSICAL REVIEW B, 1989, 39 (14): : 10063 - 10074
- [6] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4481 - 4492
- [7] DISSANAYAKE A, UNPUB
- [8] ELECTRON TRAPPING BY METASTABLE EFFECTIVE-MASS STATES OF DX DONORS IN INDIRECT-BAND-GAP ALXGA1-XAS-TE [J]. PHYSICAL REVIEW B, 1989, 40 (14): : 9671 - 9682
- [9] SEMICONDUCTOR SUPERLATTICES WITH PERIODIC DISORDER [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (06) : 1984 - 1989