共 21 条
- [1] DYNAMICS OF CARBON-MONOXIDE BINDING TO PROTOHEME[J]. JOURNAL OF CHEMICAL PHYSICS, 1976, 65 (11) : 4701 - 4711ALBERDING, NAUSTIN, RHCHAN, SSEISENSTEIN, LFRAUENFELDER, HGUNSALUS, ICNORDLUND, TM
- [2] ORIGIN OF THE NONEXPONENTIAL THERMAL EMISSION KINETICS OF DX CENTERS IN GAALAS[J]. APPLIED PHYSICS LETTERS, 1986, 49 (11) : 657 - 659CALLEJA, EMOONEY, PMWRIGHT, SLHEIBLUM, M
- [3] FINE-STRUCTURE OF THE ALLOY-BROADENED THERMAL EMISSION-SPECTRA FROM DX CENTERS IN GAALAS[J]. APPLIED PHYSICS LETTERS, 1988, 52 (22) : 1877 - 1879CALLEJA, EGOMEZ, AMUNOZ, ECAMARA, P
- [4] ON THE CARRIER EMISSION FROM DONOR-RELATED CENTERS IN GAAS1-XPX AND ALXGA1-XAS[J]. SOLID-STATE ELECTRONICS, 1986, 29 (01) : 83 - 88CALLEJA, EGOMEZ, AIMUNOZ, E
- [5] EFFECT OF THE SILICON DOPING CONCENTRATION ON THE RECOMBINATION KINETICS OF DX CENTERS IN AL0.35GA0.65AS[J]. APPLIED PHYSICS LETTERS, 1986, 48 (16) : 1093 - 1095CASWELL, NSMOONEY, PMWRIGHT, SLSOLOMON, PM
- [6] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS[J]. PHYSICAL REVIEW LETTERS, 1988, 61 (07) : 873 - 876CHADI, DJCHANG, KJ
- [7] DEEP DONOR MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY EFFECT[J]. APPLIED PHYSICS LETTERS, 1986, 48 (10) : 656 - 658HJALMARSON, HPDRUMMOND, TJ
- [8] STRETCHED-EXPONENTIAL RELAXATION ARISING FROM DISPERSIVE DIFFUSION OF HYDROGEN IN AMORPHOUS-SILICON[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (09) : 1037 - 1040KAKALIOS, JSTREET, RAJACKSON, WB
- [9] DEPENDENCE OF THE ALXGA1-XAS BAND EDGE ON ALLOY COMPOSITION BASED ON THE ABSOLUTE MEASUREMENT OF X[J]. APPLIED PHYSICS LETTERS, 1987, 51 (07) : 505 - 507KUECH, TFWOLFORD, DJPOTEMSKI, RBRADLEY, JAKELLEHER, KHYAN, DFARRELL, JPLESSER, PMSPOLLAK, FH
- [10] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS[J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030LANG, DVLOGAN, RAJAROS, M