DONORS IN SEMICONDUCTORS AND METASTABILITY

被引：10

作者：

BOURGOIN, JC

VONBARDELEBEN, HJ

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.40.10006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10006 / 10008

页数：3

共 23 条

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[2]

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[3] PHYSICAL ORIGIN OF THE DX-CENTER [J].

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[4] DX CENTER IN GA1-XALXAS ALLOYS [J].

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FENG, SL ;

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BOURGOIN, JC ;

VONBARDELEBEN, HJ ;

STIEVENARD, D .

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[6]

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[7] METASTABILITY OF THE ISOLATED ARSENIC-ANTISITE DEFECT IN GAAS [J].

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CHANG, KJ .

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[8] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876

[9] THEORETICAL EVIDENCE FOR AN OPTICALLY INDUCIBLE STRUCTURAL TRANSITION OF THE ISOLATED AS ANTISITE IN GAAS - IDENTIFICATION AND EXPLANATION OF EL2 [J].

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SCHEFFLER, M .

PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2183-2186

[10] METASTABLE STATE OF EL2 IN GAAS [J].

DELERUE, C ;

LANNOO, M ;

STIEVENARD, D ;

VONBARDELEBEN, HJ ;

BOURGOIN, JC .

PHYSICAL REVIEW LETTERS, 1987, 59 (25) :2875-2878

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