DX CENTERS IN SN-DOPED GA0.7AL0.3AS

被引：11

作者：

HAYES, TM ^{[1
]}

WILLIAMSON, DL ^{[1
]}

OUTZOURHIT, A ^{[1
]}

SMALL, P ^{[1
]}

GIBART, P ^{[1
]}

RUDRA, A ^{[1
]}

机构：

[1] SOPHIA ANTIPOLIS,SOLID STATE PHYS & SOLAR ENERGY LAB,CNRS,F-06560 VALBONNE,FRANCE

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1989年 / 18卷 / 02期

关键词：

D O I：

10.1007/BF02657409

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：207 / 208

页数：2

共 15 条

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[10] SMALL LATTICE-RELAXATION AT THE DX CENTER AS STUDIED BY EXTENDED X-RAY ABSORPTION FINE-STRUCTURE ON SE-DOPED ALGAAS [J].

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