Rotation of a silicon dimer over the trench between dimer rows on the Si(001) surface

被引：8

作者：

Goringe, CM ^{[1
]}

Bowler, DR ^{[1
]}

机构：

[1] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

来源：

SURFACE SCIENCE | 1998年 / 407卷 / 1-3期

关键词：

density functional calculations; growth; low index single crystal surfaces; silicon; surface chemical reaction;

D O I：

10.1016/S0039-6028(98)00304-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The behaviour of ad-dimers on the Si(001) surface is of great importance during epitaxial growth. In particular, during gas source growth, dimers form over the trench between dimer rows in the non-epitaxial orientation and must rotate before being incorporated into an epitaxial island. A rotation mode for dimers in this position is described, which leads to an understanding of an important step in the growth process. The mode is modelled with ab initio methods, and a barrier is found entirely in line with available experimental observations. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：L681 / L686

页数：6

共 22 条

[1] SI BINDING AND NUCLEATION ON SI(100) [J].