Piezoresistive effect of doped carbon nanotube/cellulose films

被引：12

作者：

Wang, WL ^{[1
]}

Liao, KJ

Li, Y

Wang, YT

机构：

[1] Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China

[2] Chongqing Univ, Key Lab Educ Minist Photoelectron Technol & Syst, Chongqing 400044, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2003年 / 20卷 / 09期

关键词：

D O I：

10.1088/0256-307X/20/9/339

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The strain-induced resistance changes in iodine-doped and undoped carbon nanotube films were investigated by a three-point bending test. Carbon nanotubes were fabricated by hot filament chemical vapour deposition. The experimental results showed that there has a striking piezoresistive effect in carbon nanotube films. The gauge factor for I-doped and undoped carbon nanotube films under 500 microstrain was about 125 and 65 respectively at room temperature, exceeding that of polycrystalline silicon (30) at 35degreesC. The origin of the piezoresistivity in the films may be ascribed to a strain-induced change in the band gap for the doped tubes and to the intertube contact resistance for the undoped tubes.

引用

页码：1544 / 1547

页数：4

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