Nanoscale topography control for the fabrication of advanced diffractive optics

被引:23
作者
Liddle, JA [1 ]
Salmassi, F [1 ]
Naulleau, PP [1 ]
Gullikson, EM [1 ]
机构
[1] Lawrence Berkeley Natl Lab, Ctr Xray Opt, Berkeley, CA 94720 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 06期
关键词
D O I
10.1116/1.1622938
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Gray-scale electron beam lithography has been used to create high-efficiency (63%, output normalized) blazed gratings suitable for use at extreme ultraviolet (EUV) wavelengths (i.e., 13.4 nm). The total blaze height at these wavelengths is approximate to7 nm. The surface topography was generated in a single processing step in hydrogen silsesquioxane (HSQ). This material converts to SiO2 upon exposure and forms a robust substrate for subsequent operations,. unlike conventional organic resists. The HSQ is overcoated with a Mo/Si multilayer to provide reflectivity at EUV wavelengths. The grating efficiency is determined by, the fidelity of the profile to the ideal and by the surface roughness of the HSQ. A region of the resist response curve was identified that enabled sufficient topography to be generated while maintaining the surface roughness of the resist below 2.5 nm root mean square. Large area (0.5 x 2.0 mm(2)) gratings were fabricated, and the resulting dose profile was adjusted during the course of the exposure to compensate for observed delay-time/reciprocity effects in HSQ. (C) 2003 American Vacuum Society.
引用
收藏
页码:2980 / 2984
页数:5
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