Theoretical efficiency analysis of a condenser-embedded grating-based spectral purity filter for EUV lithography

被引:8
作者
Naulleau, PP
Sweatt, WC
Tichenor, DA
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Ctr Xray Opt, Berkeley, CA 94720 USA
[2] Sandia Natl Labs, Albuquerque, NM 87185 USA
[3] Sandia Natl Labs, Livermore, CA 94550 USA
关键词
extreme ultraviolet; lithography; monochromator; multilayer; grating;
D O I
10.1016/S0030-4018(02)02169-7
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Being based on reflective optics, extreme ultraviolet (EUV) lithography systems are, in principle, relatively immune to chromatic errors. However, illumination bandwidth control is still required for EUV lithography. For example, appreciable amounts of UV power, combined with resist sensitivity to this wavelength band, would decrease image contrast. Also, appreciable amounts of IR power would place unacceptable thermal loads on the projection optics. A practical method for spectral filtering, widely used in short-wavelength synchrotron applications, is the grating monochromator. Here we present the theoretical performance analysis, of a,grating-based spectral purity filter integrated into an EUV lithography condenser system. Although the specific examples presented here are geared towards a specific condenser design, it should be noted that the methods described are generally applicable to a variety of condenser designs as might be found in future EUV lithography systems. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:31 / 38
页数:8
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