Fine pattern replication on 10-mm X 10-mm exposure area using ETS-1 laboratory tool in HIT

Utilizing ETS-1 laboratory tool in Himeji Institute of Technology (HIT), as for the fine pattern replication by using the Cr mask in static exposure, it is replicated in the exposure area of 10 mm X 2 mm in size that the line and space pattern width of 60 nm, the isolated line pattern width of 40 nm, and hole pattern width of 150 run. According to the synchronous scanning of the mask and wafer with EUVL laboratory tool (ETS-1) with reduction optical system which consisted of three-aspherical-mirror in the NewSUBARU facilities succeeded in the line of 60 nm and the space pattern formation in the exposure region of 10 mm x 10 mm. From the result of exposure characteristics for positive-tone resist for KrF and EB, KrF chemically amplified resist has better characteristics than EB chemically amplified resist.