Status of the liquid-xenon-jet laser-plasma source for EUV lithography

被引：28

作者：

Hansson, BAM ^{[1
]}

Rymell, L ^{[1
]}

Berglund, M ^{[1
]}

Hemberg, O ^{[1
]}

机构：

[1] Innolite AB, SE-11550 Stockholm, Sweden

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES VI, PTS 1 AND 2 | 2002年 / 4688卷

关键词：

EUV lithography; laser-produced plasma; liquid jet; xenon;

D O I：

10.1117/12.472274

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The liquid-xenon-jet laser-plasma source is one of the extreme-ultraviolet (EUV) source technologies under development for EUV lithography. This paper presents some recent improvements of the technology, including the ability to operate a stable plasma at a distance of 50 mm from the nozzle, the first positive mirror-lifetime results, and improved laser-to-EUV conversion efficiency of 0.75%/(2%BW 2pisr) at lambda=13.45 nm.

引用

页码：102 / 109

页数：4

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