The relationship between an EUV source and the performance of an EUV lithographic system

被引:34
作者
Banine, V [1 ]
Benschop, J [1 ]
Leenders, M [1 ]
Moors, R [1 ]
机构
[1] ASML, NL-5503 LA Veldhoven, Netherlands
来源
EMERGING LITHOGRAPHIC TECHNOLOGIES IV | 2000年 / 3997卷
关键词
EUV; source; lithography;
D O I
10.1117/12.390048
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The light source is a critical factor when Extreme UltraViolet Lithography (EUVL) is used. This paper shows the link between the light source and the customer's requirements. These are: Throughput, Cost of Ownership (CoO) and imaging quality (e.g. CD uniformity). Also shown is how customer requirements dictate the necessary performance specifications for light sources. To be competitive with other New Generation Lithography technologies, EUVL tools should show a potential for high throughput. This puts a high requirement on the collectable in-band power produced by an EUV source. CD control requirements, together with restrictions of reflective optics, are discussed. This means that the pulse-to-pulse repeatability, the spatial stability control and the repetition rates, must be substantially better than those of current optical systems. It is essential, in the early stages of the development of potential light sources, to understand the source limitations. It is also essential to see the way the light source or the total source/lithographic system could be improved, in the development time, to meet the lithography tool requirements. Although there are no light sources currently under development that comply with the requirements for an EUVL production tool, future improvement in the performance of light sources seems possible. This paper shows detailed analyses of the way to meet a and production tool requirements, including the increase in repetition rate, for all of the sources. The decrease in energy per pulse will be also be discussed. The performance requirements for the light source for the first lithographic tool, together with the timeline for its choice, will be shown.
引用
收藏
页码:126 / 135
页数:10
相关论文
共 12 条
[1]  
BANINE V, 1999, IN PRESS P MNE
[2]  
BENSCHOP JP, 2000, IN PRESS P SPIE
[3]   EUCLIDES, the European EUVL program [J].
Benschop, JPH ;
Kaiser, WM ;
Ockwell, DC .
EMERGING LITHOGRAPHIC TECHNOLOGIES III, PTS 1 AND 2, 1999, 3676 :246-252
[4]  
GWYN C, 1998, EUV LLC WHITE PAPER
[5]  
GWYN CW, 1999, EUV WHITE PAPER
[6]  
MCGEOCH M, 1998, APPL OPTICS, V37
[7]   EUV (13.5nm) light generation using a Dense Plasma Focus device [J].
Partlo, W ;
Fomenkov, I ;
Birx, D .
EMERGING LITHOGRAPHIC TECHNOLOGIES III, PTS 1 AND 2, 1999, 3676 :846-858
[8]   High-power plasma discharge source at 13.5 nm and 11.4 nm for EUV lithography [J].
Silfvast, WT ;
Klosner, M ;
Shimkaveg, G ;
Bender, H ;
Kubiak, G ;
Fornaciari, N .
EMERGING LITHOGRAPHIC TECHNOLOGIES III, PTS 1 AND 2, 1999, 3676 :272-275
[9]   Peak and Integrated reflectivity, wavelength and gamma optimization of Mo/Si, and Mo/Be multilayer, multielement optics for extreme ultraviolet lithography [J].
Stuik, R ;
Louis, E ;
Yakshin, AE ;
Görts, PC ;
Maas, ELG ;
Bijkerk, F ;
Schmitz, D ;
Scholze, F ;
Ulm, G ;
Haidl, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06) :2998-3002
[10]  
TAYLOR J, 1999, IN PRESS J VAC S DEC