High-power plasma discharge source at 13.5 nm and 11.4 nm for EUV lithography

被引：22

作者：

Silfvast, WT ^{[1
]}

Klosner, M ^{[1
]}

Shimkaveg, G ^{[1
]}

Bender, H ^{[1
]}

Kubiak, G ^{[1
]}

Fornaciari, N ^{[1
]}

机构：

[1] Univ Cent Florida, Creol, Orlando, FL 32816 USA

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES III, PTS 1 AND 2 | 1999年 / 3676卷

关键词：

EUVL; EUV source; plasma discharge source; capillary discharge source;

D O I：

10.1117/12.351098

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

An intense pulsed capillary discharge source operating at 13.5 nm and 11.4 nm, suitable for use in conjunction with Mo:Si or Mo:Be coated optics, has produced an average power of approximately 1.4 W within a 0.3 nm emission bandwidth from the end of the capillary when operated at a repetition rate of 100 Hz. The source is comprised of a small capillary discharge tube filled with xenon gas at low pressure to which electrodes are attached at each end. When a voltage is applied across the tube, an electrical current is generated for short periods within the capillary that produces highly ionized xenon ions radiating in the EUV. Issues associated with plasma bore erosion are currently being addressed from the standpoint of developing such a source for operation at repetition rates of greater than 1 kHz.

引用

页码：272 / 275

页数：2

共 3 条

[1] Intense xenon capillary discharge extreme-ultraviolet source in the 10-16-nm-wavelength region [J].