Xenon liquid-jet laser-plasma source for EUV lithography

被引：16

作者：

Hansson, BAM ^{[1
]}

Berglund, M ^{[1
]}

Hemberg, O ^{[1
]}

Hertz, HM ^{[1
]}

机构：

[1] Royal Inst Technol, SE-10044 Stockholm, Sweden

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES IV | 2000年 / 3997卷

关键词：

EUV lithography; laser-produced plasma; liquid jet; xenon;

D O I：

10.1117/12.390049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a laser-plasma source based on a cryogenic xenon liquid-jet target suitable for extreme ultraviolet (EUV) projection lithography. Recent improvements in the stability of the xenon jet allows efficient laser-plasma operation several millimeters away from the nozzle orifice. We present the first preliminary laser-to-EUV conversion efficiencies, although under non-optimized conditions, for the source.

引用

页码：729 / 732

页数：4

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